STM study on the interactions of C70 with the Si(100)2×1 surface

Xiang Dong Wang, Qikun Xue, T. Hashizume, H. Shinohara, Y. Nishina, Toshio Sakurai

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    24 Citations (Scopus)

    Abstract

    We have conducted a study of the adsorption, thin-film growth, and the reaction of C70 on the Si(100)2×1 surface. It is found that the crystalline thin film can be grown with good quality by keeping the substrate at approximately 120°C during deposition. C70's above the first layer can desorb at temperatures above approximately 250°C, which is similar to the situation in the bulk phase, but the first layer of the C70 film which is directly bonded to the Si(100) surface does not desorb or decompose upon heating to 1000°C. It reacts with the Si(100) substrate at temperatures above 1000°C to form the SiC(100)3×2 islands. The reaction products can finally desorb at temperatures above 1300°C, resulting in surface roughening.

    Original languageEnglish
    Pages (from-to)7754-7758
    Number of pages5
    JournalPhysical Review B
    Volume49
    Issue number11
    DOIs
    Publication statusPublished - 1994 Jan 1

    ASJC Scopus subject areas

    • Condensed Matter Physics

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