STM study of MBE grown III-V semiconductors

H. Kiyama, Q. K. Xue, T. Sakurai

    Research output: Contribution to journalArticlepeer-review


    We have investigated novel layer-by-layer MBE growth of highly strained InAs epilayers on the GaAs(001) substrate up to 13 ML, by in-situ scanning tunneling microscopy (STM). This growth can be only achieved when the growing front exhibits a 4×2 or a new 6×2 diffraction symmetry. Here we will discuss the atomic structure of these two reconstructions which facilitate novel planar growth, and also document the relationship between the growth mode and surface reconstruction.

    Original languageEnglish
    Pages (from-to)S13-S15
    JournalJournal of the Korean Physical Society
    Issue numberSUPPL. PART 1
    Publication statusPublished - 1997 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy(all)


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