STM Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

R. Z. Bakhtizin, Q. Zh Xue, Q. K. Xue, Y. Hasegawa, I. S.T. Tsong, T. Sakurai

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    A number of reconstructures of the GaN(0001) surface have been investigated systematically in situ by reflection high-energy electron diffraction and scanning tunneling microscopy. The GaN thin films were grown on the Si-terminated 6H-SiC(0001) surface by N plasma-assisted molecular beam epitaxy under the Ga-rich conditions. While the as-grown GaN surface is revealed to be a featureless 1 × 1 structure, post-grown deposition of Ga at lower temperatures results in the formation of the series of ordered superstructures, such as 2 × 2, 4 × 4, 5 × 5, 5√3 × 2√13, √7 × √7, and 10 × 10 in the order of the increasing Ga-coverage and annealing temperature. An 1 × 1-Ga-fluid structure is obtained with the highest Ga-coverage. Neither ordered structure nor smooth morphology has been observed under the N-rich regime. We conclude that the atomic structures of all these Ga-rich phases can be described best by a Ga-adatom scheme.

    Original languageEnglish
    Pages (from-to)243-256
    Number of pages14
    JournalPhysics of Low-Dimensional Structures
    Volume2001
    Issue number3-4
    Publication statusPublished - 2001

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Physics and Astronomy (miscellaneous)

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