STM study of Ag film initial stages growth on a GaN (0001) surface grown by MBE

R. Z. Bakhtizin; K. H. Wu; Q. Z. Xue; Q. K. Xue; T. Nagao; T. Sakurai

STM study of Ag film initial stages growth on a GaN (0001) surface grown by MBE

R. Z. Bakhtizin, K. H. Wu, Q. Z. Xue, Q. K. Xue, T. Nagao, T. Sakurai

Research output: Contribution to journal › Article › peer-review

Abstract

The adsorption and growth of Ag on the GaN(0001) pseudo 1×1-Ga surface was studied by using a combined scanning tunneling microscopy (STM)-molecular beam epitaxy (MBE) system. Ag shows high mobility and huge diffusion length on the surface, which results in the formation of large monolayer Ag islands at submonolayer coverage. We report the observation of a drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski-Krastanov growth at low Ag flux (∼0.8 ML/min) to layer-by-layer growth at a high flux (1 ML/sec). Based on this finding a new approach to obtain flat epitaxial Ag film on the GaN(0001) surface, by using high Ag flux, is demonstrated. In addition, by annealing the Ag film-covered GaN(0001) surface we found a novel unreconstructed Agterminated GaN(0001)-1×1 and explain its structure by a T₁-site adatom model.

Original language	English
Pages (from-to)	21-30
Number of pages	10
Journal	Physics of Low-Dimensional Structures
Volume	3-4
Publication status	Published - 2003
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Physics and Astronomy (miscellaneous)

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title = "STM study of Ag film initial stages growth on a GaN (0001) surface grown by MBE",

abstract = "The adsorption and growth of Ag on the GaN(0001) pseudo 1×1-Ga surface was studied by using a combined scanning tunneling microscopy (STM)-molecular beam epitaxy (MBE) system. Ag shows high mobility and huge diffusion length on the surface, which results in the formation of large monolayer Ag islands at submonolayer coverage. We report the observation of a drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski-Krastanov growth at low Ag flux (∼0.8 ML/min) to layer-by-layer growth at a high flux (1 ML/sec). Based on this finding a new approach to obtain flat epitaxial Ag film on the GaN(0001) surface, by using high Ag flux, is demonstrated. In addition, by annealing the Ag film-covered GaN(0001) surface we found a novel unreconstructed Agterminated GaN(0001)-1×1 and explain its structure by a T1-site adatom model.",

author = "Bakhtizin, {R. Z.} and Wu, {K. H.} and Xue, {Q. Z.} and Xue, {Q. K.} and T. Nagao and T. Sakurai",

year = "2003",

language = "English",

volume = "3-4",

pages = "21--30",

journal = "Physics of Low-Dimensional Structures",

issn = "0204-3467",

publisher = "VSV Co Ltd",

}

TY - JOUR

T1 - STM study of Ag film initial stages growth on a GaN (0001) surface grown by MBE

AU - Bakhtizin, R. Z.

AU - Wu, K. H.

AU - Xue, Q. Z.

AU - Xue, Q. K.

AU - Nagao, T.

AU - Sakurai, T.

PY - 2003

Y1 - 2003

N2 - The adsorption and growth of Ag on the GaN(0001) pseudo 1×1-Ga surface was studied by using a combined scanning tunneling microscopy (STM)-molecular beam epitaxy (MBE) system. Ag shows high mobility and huge diffusion length on the surface, which results in the formation of large monolayer Ag islands at submonolayer coverage. We report the observation of a drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski-Krastanov growth at low Ag flux (∼0.8 ML/min) to layer-by-layer growth at a high flux (1 ML/sec). Based on this finding a new approach to obtain flat epitaxial Ag film on the GaN(0001) surface, by using high Ag flux, is demonstrated. In addition, by annealing the Ag film-covered GaN(0001) surface we found a novel unreconstructed Agterminated GaN(0001)-1×1 and explain its structure by a T1-site adatom model.

AB - The adsorption and growth of Ag on the GaN(0001) pseudo 1×1-Ga surface was studied by using a combined scanning tunneling microscopy (STM)-molecular beam epitaxy (MBE) system. Ag shows high mobility and huge diffusion length on the surface, which results in the formation of large monolayer Ag islands at submonolayer coverage. We report the observation of a drastic change of the Ag growth mode on the GaN(0001) surface, from Stranski-Krastanov growth at low Ag flux (∼0.8 ML/min) to layer-by-layer growth at a high flux (1 ML/sec). Based on this finding a new approach to obtain flat epitaxial Ag film on the GaN(0001) surface, by using high Ag flux, is demonstrated. In addition, by annealing the Ag film-covered GaN(0001) surface we found a novel unreconstructed Agterminated GaN(0001)-1×1 and explain its structure by a T1-site adatom model.

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VL - 3-4

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JO - Physics of Low-Dimensional Structures

JF - Physics of Low-Dimensional Structures

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