STM and cluster calculation study of segregated B on Si(001) surface

Tadahiro Komeda, Yasushiro Nishioka

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The atomic configuration of B atoms on the Si(001)-2 × 1 surface which are segregated on the top surface is investigated with scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) whose data are further analyzed by comparison with a cluster model calculation with a local density approximation method. Unoccupied state STM images show characteristic paired protrusions which are located on both sides of the Si dimer rows in a symmetrical manner. They can be observed only at a higher sample bias (> 1.4 V) and are enhanced at ∼2.0 V, which is further confirmed quantitatively by STS measurements. The cluster calculation shows that a model where a B atom is bridging two neighboring Si dimers in the same dimer row can reproduce the STM and STS observations.

Original languageEnglish
Pages (from-to)1188-1192
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
Publication statusPublished - 1998 Mar 1
Externally publishedYes

Keywords

  • B
  • CITS
  • DMol
  • STM
  • Segregation
  • Si surface
  • Steps
  • Stripe steps

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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