Sticking probability and adsorption process of NH3 on Si(100) surface

T. Takaoka, I. Kusunoki

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

The absolute sticking probability of NH3 molecules on Si(100) surface was measured using a NH3 molecular beam. Also taking into account the measured angular distribution of the scattered NH3 molecules, it is concluded that the adsorption of NH3 follows a trapping-mediated mechanism. From the dependence of the initial sticking probability on the sample temperature, the difference between the activation energies for desorption and chemisorption from a precursor state, (Edes-Ead), was estimated. The coverage dependence of the sticking probability, s(Θ), was also measured. From the sample temperature dependence of s(Θ), parameters for the migration of the NH3 precursor were derived using the Kisliuk model. The kinetics of the adsorption of NH3 on the Si(100) is discussed on the basis of this model.

Original languageEnglish
Pages (from-to)30-41
Number of pages12
JournalSurface Science
Volume412-413
DOIs
Publication statusPublished - 1998 Sep 3

Keywords

  • Adsorption kinetics
  • Ammonia
  • Low index single crystal surfaces
  • Molecule-solid scattering and diffraction - Inelastic
  • Silicon
  • Single crystal surfaces

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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