Abstract
SET can achieve high performance without precise photolithography and metallization techniques. An arsenic doped polycrystalline silicon is used as a part of the emitter electrode in the SET structure. It is processed to have an inverse trapezoid shape. Procedure to make the inverse trapezoid shape uses a difference of etching rates between double layers of polycrystalline silicon. Base contact windows are opened through the ion-implantation process followed by chemical etching. The cut off frequency is about 8. 4 GHz. This frequency is higher than that of the conventional planar transistors with equal size emitter by 2 GHz.
| Original language | English |
|---|---|
| Pages | 43-46 |
| Number of pages | 4 |
| Publication status | Published - 1977 Jan 1 |
| Event | Proc Conf Solid State Devices 8th - Tokyo, Jpn Duration: 1976 Sep 1 → 1976 Sep 3 |
Other
| Other | Proc Conf Solid State Devices 8th |
|---|---|
| City | Tokyo, Jpn |
| Period | 76/9/1 → 76/9/3 |
ASJC Scopus subject areas
- Engineering(all)