Step free energies, surface stress, and adsorbate interactions for Cl-Si(100) at 700 K

G. J. Xu, S. V. Khare, Koji S. Nakayama, C. M. Aldao, J. H. Weaver

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The evolution and equilibrium morphology of Si(100) with 0.1 monolayer of adsorbed Cl was studied at 700 K with variable temperature scanning tunneling microscopy. Chlorine caused surface roughening with monolayer pits and regrowth islands. The aspect ratio of these features then increased with their size because of the surface-stress anisotropy. By analyzing the equilibrium feature shape as a function of size, we found that the ratio of step free energies for A- and B-type steps was Fb/Fa = 2.44 for regrowth islands and 3.33 for pits. These ratios are higher than for clean Si(100), Fb/Fa = 2.13, because the steps are destabilized.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number23
DOIs
Publication statusPublished - 2003 Dec 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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