Step bunching and step "rotation" in homoepitaxial growth of Si on Si(110)-16 × 2

Arnold Alguno, Sergey N. Filimonov, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Kinetics of the step flow growth on the (16 × 2) reconstructed Si(110) surface has been studied experimentally and with computer simulations. It is shown that during Si growth under DC heating vicinal steps on the (16 × 2) reconstructed Si(110) surfaces undergo a kinetic step bunching and develop extended segments preferentially oriented along the (16 × 2) reconstruction domains. The final step configuration depends crucially on the direction of the applied electric field. In particular, when DC is applied in the [11̄2] direction, an array of straight multisteps parallel to the current direction and rotated in respect to the original orientation of the vicinal steps can be fabricated. Surprisingly, the observed step transformations are not affected by the polarity of the applied electrical field. Using a simple model of the Si/Si(110)-(16 × 2) growth and kinetic Monte Carlo simulations we show that the step bunching and step rotation on Si(110)-(16 × 2) might be induced by an incoherent matching of the (16 × 2) reconstruction domains across the vicinal steps on the surface.

Original languageEnglish
Pages (from-to)838-843
Number of pages6
JournalSurface Science
Issue number7-8
Publication statusPublished - 2011 Apr 1


  • Models of surface kinetics
  • Molecular beam epitaxy
  • Monte Carlo simulations
  • Silicon
  • Step formation and bunching
  • Surface diffusion
  • Surface relaxation and reconstruction
  • Vicinal single crystal surfaces

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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