Steep switching less than 15 mV dec-1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Fingerprint Dive into the research topics of 'Steep switching less than 15 mV dec<sup>-1</sup> in silicon-on-insulator tunnel FETs by a trimmed-gate structure'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy