Steep switching less than 15 mV dec-1 in silicon-on-insulator tunnel FETs by a trimmed-gate structure

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We study a novel trimmed-gate (TG) structure, which substantially decreases the subthreshold swing (SS) of a tunnel field-effect transistor (TFET). Our technology computer-aided simulations demonstrate that the TG structure strongly suppresses the off leak component of the band-to-band tunneling current. As a result, an extremely steep SS of less than 15 mV dec-1 can be realized in a silicon-on-insulator (SOI) TFET. We also demonstrate that the improvement of SS is enhanced by a high source doping thanks to the TG structure. The mechanism of the steep switching by the TG structure does not depend on any specific material or process technology. Therefore, the SS improvement as a result of the TG structure is applicable to various types of TFETs as well as the SOI TFET.

Original languageEnglish
Article numberSBBA16
JournalJapanese journal of applied physics
Volume58
Issue numberSB
DOIs
Publication statusPublished - 2019 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Steep switching less than 15 mV dec<sup>-1</sup> in silicon-on-insulator tunnel FETs by a trimmed-gate structure'. Together they form a unique fingerprint.

  • Cite this