Steep switching in trimmed-gate tunnel FET

Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda

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2 Citations (Scopus)

Abstract

We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a "channel", which normally appear in a conventional TFET, and realize a sudden switching to the on-state arising from a short BTBT path. Our simulations demonstrate that the TG-TFET can achieve an extremely steep SS, less than 10 mV/decade, in the double-gated Si-channel configuration. The TG structure also improves the ratio ION/IOFF to a value higher than that of ideal MOSFETs in the operation voltage range up to 0.35 V. The mechanism of steep switching is based on a simple modification of the gate electrostatic control; therefore, in addition to the demonstrated TFETs, the TG structure is universally applicable to many types of TFETs.

Original languageEnglish
Article number095103
JournalAIP Advances
Volume8
Issue number9
DOIs
Publication statusPublished - 2018 Sep 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Asai, H., Mori, T., Matsukawa, T., Hattori, J., Endo, K., & Fukuda, K. (2018). Steep switching in trimmed-gate tunnel FET. AIP Advances, 8(9), [095103]. https://doi.org/10.1063/1.5043570