Statistical properties of atomic-scale Si/SiO2 interface roughness studied by STM

M. Niwa, H. Iwasaki, Y. Watanabe, I. Sumita, N. Akutsu, Y. Akutsu

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Thermal-oxide stripped Si(001) surface topography is measured by scanning tunneling microscopy (STM) in UHV in order to analyze the statistical properties of the surface. A quantitative analysis implies that the autocovariance of the interface topography cannot be definitely fitted by a Gaussian or an exponential function. The fractal nature of the interface is studied in the sub-nanometer range for the first time and the roughness characteristic for a Gaussian random process might be observed. The rms fluctuation and correlation length of the surface are estimated to be 3.3 and 73 Å (Gaussian fit), respectively. The effects of UHV annealing on the statistical properties of the interface roughness are also studied.

Original languageEnglish
Pages (from-to)39-44
Number of pages6
JournalApplied Surface Science
Volume60-61
Issue numberC
DOIs
Publication statusPublished - 1992

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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