Statistical properties of atomic-scale Si/SiO2 interface roughness studied by STM

M. Niwa; H. Iwasaki; Y. Watanabe; I. Sumita; N. Akutsu; Y. Akutsu

doi:10.1016/0169-4332(92)90393-C

Statistical properties of atomic-scale Si/SiO₂ interface roughness studied by STM

M. Niwa, H. Iwasaki, Y. Watanabe, I. Sumita, N. Akutsu, Y. Akutsu

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Thermal-oxide stripped Si(001) surface topography is measured by scanning tunneling microscopy (STM) in UHV in order to analyze the statistical properties of the surface. A quantitative analysis implies that the autocovariance of the interface topography cannot be definitely fitted by a Gaussian or an exponential function. The fractal nature of the interface is studied in the sub-nanometer range for the first time and the roughness characteristic for a Gaussian random process might be observed. The rms fluctuation and correlation length of the surface are estimated to be 3.3 and 73 Å (Gaussian fit), respectively. The effects of UHV annealing on the statistical properties of the interface roughness are also studied.

Original language	English
Pages (from-to)	39-44
Number of pages	6
Journal	Applied Surface Science
Volume	60-61
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(92)90393-C
Publication status	Published - 1992

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(92)90393-C

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title = "Statistical properties of atomic-scale Si/SiO2 interface roughness studied by STM",

abstract = "Thermal-oxide stripped Si(001) surface topography is measured by scanning tunneling microscopy (STM) in UHV in order to analyze the statistical properties of the surface. A quantitative analysis implies that the autocovariance of the interface topography cannot be definitely fitted by a Gaussian or an exponential function. The fractal nature of the interface is studied in the sub-nanometer range for the first time and the roughness characteristic for a Gaussian random process might be observed. The rms fluctuation and correlation length of the surface are estimated to be 3.3 and 73 {\AA} (Gaussian fit), respectively. The effects of UHV annealing on the statistical properties of the interface roughness are also studied.",

author = "M. Niwa and H. Iwasaki and Y. Watanabe and I. Sumita and N. Akutsu and Y. Akutsu",

year = "1992",

doi = "10.1016/0169-4332(92)90393-C",

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AU - Niwa, M.

AU - Iwasaki, H.

AU - Watanabe, Y.

AU - Sumita, I.

AU - Akutsu, N.

AU - Akutsu, Y.

PY - 1992

Y1 - 1992

N2 - Thermal-oxide stripped Si(001) surface topography is measured by scanning tunneling microscopy (STM) in UHV in order to analyze the statistical properties of the surface. A quantitative analysis implies that the autocovariance of the interface topography cannot be definitely fitted by a Gaussian or an exponential function. The fractal nature of the interface is studied in the sub-nanometer range for the first time and the roughness characteristic for a Gaussian random process might be observed. The rms fluctuation and correlation length of the surface are estimated to be 3.3 and 73 Å (Gaussian fit), respectively. The effects of UHV annealing on the statistical properties of the interface roughness are also studied.

AB - Thermal-oxide stripped Si(001) surface topography is measured by scanning tunneling microscopy (STM) in UHV in order to analyze the statistical properties of the surface. A quantitative analysis implies that the autocovariance of the interface topography cannot be definitely fitted by a Gaussian or an exponential function. The fractal nature of the interface is studied in the sub-nanometer range for the first time and the roughness characteristic for a Gaussian random process might be observed. The rms fluctuation and correlation length of the surface are estimated to be 3.3 and 73 Å (Gaussian fit), respectively. The effects of UHV annealing on the statistical properties of the interface roughness are also studied.

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JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

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Statistical properties of atomic-scale Si/SiO₂ interface roughness studied by STM

Abstract

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