Statistical PN junction leakage model with trap level fluctuation for Tref (refresh time) - oriented DRAM design

S. Kamohara, K. Kubota, M. Moniwa, K. Ohyu, A. Ogishima

    Research output: Contribution to journalConference articlepeer-review

    20 Citations (Scopus)

    Abstract

    By analyzing the anomalous junction leakage of a single tail bit and introducing the trap level fluctuation model, we have successfully established a methodology for predicting the refresh time (Tref) of the current and next generations for the Tref-oriented DRAM design optimization.

    Original languageEnglish
    Pages (from-to)539-542
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    Publication statusPublished - 1999 Dec 1
    Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
    Duration: 1999 Dec 51999 Dec 8

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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