Statistical evaluation of dynamic junction leakage current fluctuation using a simple arrayed capacitors circuit

Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We investigate statistical behaviors of steady-state p-n junction leakage currents at source/drain of MOSFET devices (Ileaks) and dynamic fluctuations of Ileaks using a newly developed test circuit. The test circuit can acquire the leakage currents from 28,672 n+-p diodes in 7.7 s with 10 times averaging with the range from 0.1 fA to 23 fA. We demonstrate that two normal distributions exist in the steady-state (time averaging) Ileak distributions, which have different temperature dependency. A distribution of the activation energy which extracted from temperature dependence of Ileak is also revealed. Dynamic fluctuation of Ileak can be measured precisely with a simple configuration to execute pseudo parallel sampling among numerous samples for a long time. It can clarify a positive correlation between mean values of Ileak (<Ileak>) and amplitudes of quantum fluctuation of I leak (ΔIleak).

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages683-688
Number of pages6
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2010 May 22010 May 6

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
Country/TerritoryCanada
CityGarden Grove, CA
Period10/5/210/5/6

Keywords

  • Dynamic random access memory (DRAM)
  • MOSFET
  • P-n junction leakage current
  • Random telegraph signal (RTS)
  • Retention time
  • Test circuit

ASJC Scopus subject areas

  • Engineering(all)

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