Statistical evaluation for trap energy level of RTS characteristics

A. Teramoto, T. Fujisawa, K. Abe, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

The energy distributions of traps which cause RTS noise using the array test pattern having a large number of n-MOS and p-MOS are investigated. The more traps which cause RTS noise located near the conduction band. The phenomena in p-MOS are almost the same as n-MOS. However, the number of traps in p-MOS is less than that in n-MOS. The tendency of the energy distribution of the traps near the conduction band edge is different from that near the valence band edge.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages99-100
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 19
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 2010 Jun 152010 Jun 17

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1510/6/17

Keywords

  • MOS
  • Noise
  • RTS
  • Statistical evaluation
  • Trap

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Teramoto, A., Fujisawa, T., Abe, K., Sugawa, S., & Ohmi, T. (2010). Statistical evaluation for trap energy level of RTS characteristics. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 99-100). [5556186] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556186