Statistical evaluation for anomalous SILC of tunnel oxide using integrated array TEG

Yuki Kumagai, Akinobu Teramoto, Shigetoshi Sugawa, Tomoyuki Suwa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We propose a new test-element-group (TEG) in order to study anomalous stress-induced leakage current (SILC) of tunnel oxide, which is a problem for flash memory reliability. Using this TEG, gate current through the tunnel oxide in the order of 10 A can be measured for about 1,000,000 transistors within 4 minutes. The behavior of anomalous SILC when Fowler-Nordheim (FN) electron tunneling stress is applied or measurement temperature is changed was investigated. It was detected that the anomalous SILC appears or disappears by applying stress and it was annealed out at high temperature measurement, as observed in flash memory cells. This TEG can be fabricated by simple processes, and its peripheral circuits are simple structures, so the tunnel dielectric can be changed drastically. We consider that using this TEG for the development of tunnel dielectric can lead to clarifying the origin of anomalous SILC, and promote the downscaling of tunnel dielectric thickness.

Original languageEnglish
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages219-224
Number of pages6
DOIs
Publication statusPublished - 2008 Sep 17
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: 2008 Apr 272008 May 1

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period08/4/2708/5/1

ASJC Scopus subject areas

  • Engineering(all)

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