TY - JOUR
T1 - Statistical analysis of threshold voltage variation using MOSFETs with asymmetric source and drain
AU - Ichino, Shinya
AU - Teramoto, Akinobu
AU - Kuroda, Rihito
AU - Mawaki, Takezo
AU - Suwa, Tomoyuki
AU - Sugawa, Shigetoshi
N1 - Funding Information:
Manuscript received September 11, 2018; revised September 28, 2018; accepted October 1, 2018. Date of publication October 5, 2018; date of current version November 26, 2018. This work was supported in part by JSPS KAKENHI under Grant 17H04921. The review of this letter was arranged by Editor V. Moroz. (Corresponding author: Shinya Ichino.) S. Ichino, R. Kuroda, and T. Mawaki are with the Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan (e-mail: shinya.ichino.s1@dc.tohoku.ac.jp).
Publisher Copyright:
© 2018 IEEE.
PY - 2018/12
Y1 - 2018/12
N2 - Threshold voltage variation is considered to be caused by various factors, such as random dopant fluctuation, surface roughness, metal gate granularity, and so on. Its magnitude (σVth) is proportional to the reciprocal of the square root of the gate area in conventional rectangular transistors. In this letter, the statistical analysis of the threshold voltage variation of trapezoidal and octagonal transistors that have asymmetric gate widths at source and drain side was discussed, in addition to the rectangular transistors. From the statistical analysis, it is experimentally demonstrated that σVth is correlated with the gate width at source side (WS), not average gate width (Wave) which determines the gate area. Therefore, it is considered that σVth is characterized by the common parameter of WS even if the main factor of the threshold voltage variation would be changed.
AB - Threshold voltage variation is considered to be caused by various factors, such as random dopant fluctuation, surface roughness, metal gate granularity, and so on. Its magnitude (σVth) is proportional to the reciprocal of the square root of the gate area in conventional rectangular transistors. In this letter, the statistical analysis of the threshold voltage variation of trapezoidal and octagonal transistors that have asymmetric gate widths at source and drain side was discussed, in addition to the rectangular transistors. From the statistical analysis, it is experimentally demonstrated that σVth is correlated with the gate width at source side (WS), not average gate width (Wave) which determines the gate area. Therefore, it is considered that σVth is characterized by the common parameter of WS even if the main factor of the threshold voltage variation would be changed.
KW - Asymmetric gate transistor
KW - MOSFET
KW - statistical variation
KW - threshold voltage
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U2 - 10.1109/LED.2018.2874012
DO - 10.1109/LED.2018.2874012
M3 - Article
AN - SCOPUS:85054523369
VL - 39
SP - 1836
EP - 1839
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 12
M1 - 8482471
ER -