Statistical analysis of RTS noise and low frequency noise in 1M MOSFETs using an advanced TEG

K. Abe, S. Sugawa, S. Watabe, N. Miyamoto, A. Teramoto, M. Toita, Y. Kamata, K. Shibusawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises statistically, as the result, we confirmed that appearance probabilities in the TEG and noise intensities of RTS are dependent on gate sizes.

Original languageEnglish
Title of host publicationNoise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007
Pages115-118
Number of pages4
DOIs
Publication statusPublished - 2007
Event19th International Conference on Noise and Fluctuations, ICNF2007 - Tokyo, Japan
Duration: 2007 Sep 92007 Sep 14

Publication series

NameAIP Conference Proceedings
Volume922
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other19th International Conference on Noise and Fluctuations, ICNF2007
CountryJapan
CityTokyo
Period07/9/907/9/14

Keywords

  • MOSFET
  • RTS noise
  • Statistical Analysis
  • Test Element Group

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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