@inproceedings{e3f408991f564492b64f574f41c3e6f4,
title = "Statistical analysis of RTS noise and low frequency noise in 1M MOSFETs using an advanced TEG",
abstract = "In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises statistically, as the result, we confirmed that appearance probabilities in the TEG and noise intensities of RTS are dependent on gate sizes.",
keywords = "MOSFET, RTS noise, Statistical Analysis, Test Element Group",
author = "K. Abe and S. Sugawa and S. Watabe and N. Miyamoto and A. Teramoto and M. Toita and Y. Kamata and K. Shibusawa and T. Ohmi",
note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 19th International Conference on Noise and Fluctuations, ICNF2007 ; Conference date: 09-09-2007 Through 14-09-2007",
year = "2007",
doi = "10.1063/1.2759648",
language = "English",
isbn = "9780735404328",
series = "AIP Conference Proceedings",
pages = "115--118",
booktitle = "Noise and Fluctuations - 19th International Conference on Noise and Fluctuations, ICNF 2007",
}