Statistical analysis of random telegraph noise reduction effect by separating channel from the interface

A. Yonezawa, A. Teramoto, R. Kuroda, H. Suzuki, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Citations (Scopus)

Abstract

Random Telegraph Noise (RTN) has become one of the most important problems in the continuous downscaling of CMOS circuitry. We demonstrate the RTN reduction by introducing buried channel (BC) MOSFETs and discusse its reduction mechanism. Because of the larger distance between channel and SiO 2/Si interface, it is more difficult for conduction carriers to be captured in and emitted from the insulator. The effective coulomb blockade radius of charged traps is small since the channel is separated from the SiO 2/Si interface and locates widely and apart from the Si/SiO 2 interface. Hence, the impact of charged traps is small, resulting in a decrease of probability of RTN, especially RTN with large amplitude. The separation of trap-channel distance and wider channel width are the key parameters to suppress the transition probability between the trap and channel and the influence of trapped charge to the channel.

Original languageEnglish
Title of host publication2012 IEEE International Reliability Physics Symposium, IRPS 2012
Pages3B.5.1-3B.5.7
DOIs
Publication statusPublished - 2012 Sep 28
Event2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
Duration: 2012 Apr 152012 Apr 19

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
CountryUnited States
CityAnaheim, CA
Period12/4/1512/4/19

Keywords

  • Buried Channel (BC)
  • MOSFET
  • Random Telegraph Noise (RTN)
  • Statistical analysis

ASJC Scopus subject areas

  • Engineering(all)

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