Statistical analysis of multiple cracking phenomenon of a SiOx thin film on a polymer substrate

M. Yanaka, Y. Tsukahara, T. Okabe, N. Takeda

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


The progress of multiple cracking in a silicon oxide (SiOx) film deposited onto a polyethylene terephthalate substrate was analyzed using Monte Carlo simulation. The finite-element analysis, assuming elastoplastic behavior of the polymer substrate, was conducted to calculate the stress distributions in film fragments and was used in the simulation. The Weibull parameters of the film were determined from the scatter of crack onset strain. The simulation predicted successfully the crack density and the distribution of fragment lengths during the progress of multiple cracking. The validity of the shear lag analysis based on the unique stress criterion in a previous study was also evaluated.

Original languageEnglish
Pages (from-to)713-719
Number of pages7
JournalJournal of Applied Physics
Issue number2
Publication statusPublished - 2001 Jul 5
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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