A static frequency divider constructed with resonant tunneling diodes (RTD's) in combination with HKMT's is proposed and demonstrated. The circuit complexity is reduced drastically. The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology. Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches. Each sub-circuit consists of only three components. This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology. The strong non-linear I - V characteristics of RTD's are fully utilized for this reduction.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering