65 Citations (Scopus)

Abstract

Nonvolatile spintronic devices have potential advantages, such as fast read/write and high endurance together with back-end-of-the-line compatibility, which offers the possibility of constructing not only stand-alone RAMs and embedded RAMs that can be used in conventional VLSI circuits and systems but also standby-power-free high-performance nonvolatile CMOS logic employing logic-in-memory architecture. The advantages of employing spintronic devices, especially magnetic tunnel junction (MTJ) devices with CMOS circuits, are discussed, and the current status of the MTJ-based VLSI computing paradigm is presented along with its prospects and remaining challenges.

Original languageEnglish
Pages (from-to)1844-1863
Number of pages20
JournalProceedings of the IEEE
Volume104
Issue number10
DOIs
Publication statusPublished - 2016 Oct

Keywords

  • Field-programmable gate array
  • MTJ device
  • MTJ/MOS-hybrid circuit
  • image recognition
  • logic-in-memory architecture
  • magneto-resistive RAM
  • microcontroller unit (MCU)
  • nonvolatile LSI
  • power gating
  • standby power
  • ternary content-addressable memory

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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