Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

Shoun Matsunaga, Kimlyuki Hlyama, Atsushi Matsumoto, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

Research output: Contribution to journalArticlepeer-review

79 Citations (Scopus)

Abstract

A compact ternary content-addressable memory (TCAM) cell of 3.15μ.m 2 with a 0.14 μm complementary metal oxide semiconductor process is realized by the use of nonvolatile magnetic tunnel junction (MTJ) devices with spin-injection write. This TCAM cell based on logic-in-memory architecture with nonvolatile MTJs needs no standby power, yet allows instant shut-down of the supply voltage without data backup to an external nonvolatile device.

Original languageEnglish
Article number023004
JournalApplied Physics Express
Volume2
Issue number2
DOIs
Publication statusPublished - 2009 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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