Stacking faults in an epitaxially grown PbTiO 3 thick film and their size distribution

Kenta Aoyagi, Yumiko Kodama, Takanori Kiguchi, Yoshitaka Ehara, Hiroshi Funakubo, Toyohiko J. Konno

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The microstructure of an epitaxial PbTiO 3 thick film, grown on a SrRuO 3/SrTiO 3 substrate at 600 °C by pulsed-MOCVD method, was investigated by using transmission electron microscopy. A number of extrinsic or intrinsic stacking faults were observed in the epitaxial PbTiO 3 thick film and they were parallel to the (0 0 1) plane of the PbTiO 3. We also investigated the size distribution of these stacking faults. The width of these stacking faults along the [1 0 0] axis of the PbTiO 3 was very small, ranging from 2 to 13 nm. It was also revealed that the size distribution of stacking faults depends on the position in the film: near the surface, near the substrate, near threading dislocations, and near 90° domain boundaries.

Original languageEnglish
Pages (from-to)528-531
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number7
Publication statusPublished - 2012 Apr 25


  • Microstructure
  • PbTiO
  • Stacking faults
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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