Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application

K. Tuokedaerhan, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A sputtering process using multi-stacking of carbon and metal thin films with subsequent annealing process to reactively form metal carbides (TiC, TaC, and W2C) has been presented. Grain sizes of the carbides are as small as 3.9, 3.2, and 1.9 nm for TiC, TaC, and W2C, respectively. Work functions of TiC, TaC, and W2C layers have been extracted as 4.3, 4.7, and 4.9 eV, respectively, relatively high values due to oriented growth. W2C layer formed by the presented process gives high potential to form carbides with nano-sized grain and high work function for gate electrode application.

Original languageEnglish
Article number111908
JournalApplied Physics Letters
Volume103
Issue number11
DOIs
Publication statusPublished - 2013 Sep 9
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application'. Together they form a unique fingerprint.

  • Cite this

    Tuokedaerhan, K., Tan, R., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2013). Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application. Applied Physics Letters, 103(11), [111908]. https://doi.org/10.1063/1.4821134