Stacked integration of MEMS on LSI

Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer methods are categorized to film transfer, device transfer connectivity last, and immediate connectivity at device transfer. Applications of these transfer methods are film bulk acoustic resonator (FBAR) on LSI, lead zirconate titanate (Pb(Zr,Ti)O3) (PZT) MEMS switch on LSI, and surface acoustic wave (SAW) resonators on LSI using respective methods. A selective transfer process was developed for multiple SAWfilters on LSI. Tactile sensors and active matrix electron emitters for massive parallel electron beam lithography were developed using the through-Si vias.

Original languageEnglish
Article number137
Issue number8
Publication statusPublished - 2016 Aug 5


  • LSI
  • MEMS
  • Stacked integration
  • Through Si vias
  • Wafer level transfer

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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