Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device

William A. Borders, Shunsuke Fukami, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

We investigate the stack structure dependence of magnetic properties on thin films that consist of an antiferromagnetic PtMn and a ferromagnetic Co/Ni multilayer for field-free spin-orbit torque-induced magnetization switching devices. Magnetic parameters, such as the spontaneous magnetization, effective and interfacial magnetic anisotropies, and exchange bias field are quantified as a function of stack structure. Engineering of the stack allows the improvement of current-induced magnetization switching characteristics compared with a previous work, which is confirmed using patterned Hall cross devices.

Original languageEnglish
Article number7926446
JournalIEEE Transactions on Magnetics
Volume53
Issue number11
DOIs
Publication statusPublished - 2017 Nov

Keywords

  • Antiferromagnet
  • artificial neural networks (ANNs)
  • exchange bias
  • spin-orbit torque (SOT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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