Stable yttrium oxyfluoride used in plasma process chamber

Yoshinobu Shiba, Akinobu Teramoto, Tetsuya Goto, Yukio Kishi, Yasuyuki Shirai, Shigetoshi Sugawa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

An yttrium oxyfluoride (YOF) protective material was developed for the inner wall of plasma process equipment. Using microwave-excited surface-wave high-density plasma equipment, the chemical stability of the obtained YOF films was evaluated by exposure to H2/Ar, N2/Ar, NH3/Ar, O2/Ar, and NF3/Ar plasmas. The YOF film surface was stable against these plasmas containing hydrogen, nitrogen, oxygen, and fluorine. Especially, the stability of YOF against fluoridation was better than that of Y2O3, which is currently widely used as the protective material in plasma process chambers.

Original languageEnglish
Article number021405
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume35
Issue number2
DOIs
Publication statusPublished - 2017 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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