Abstract
We investigated a stable state of a fluorine (F) atom in Si bulk by using first-principles calculations. We considered various interstitial sites and three charge states from +1 to -1. We found that over a wide range of Fermi levels, the bond center site in the +1 charge state is the most stable for an F atom. The present calculations suggest that the experimentally observed conductivity-dependent etching properties of F for Si are intimately related to the charge-state-dependent stable site of F in the Si bulk.
Original language | English |
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Pages (from-to) | 595-597 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 116 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2000 Oct 14 |
Externally published | Yes |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry