Stable site and stable charge state of a fluorine atom in Si

A. Taguchi, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We investigated a stable state of a fluorine (F) atom in Si bulk by using first-principles calculations. We considered various interstitial sites and three charge states from +1 to -1. We found that over a wide range of Fermi levels, the bond center site in the +1 charge state is the most stable for an F atom. The present calculations suggest that the experimentally observed conductivity-dependent etching properties of F for Si are intimately related to the charge-state-dependent stable site of F in the Si bulk.

Original languageEnglish
Pages (from-to)595-597
Number of pages3
JournalSolid State Communications
Volume116
Issue number11
DOIs
Publication statusPublished - 2000 Oct 14
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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