Stable site and stable charge state of a fluorine atom in Si

A. Taguchi; Yoshiro Hirayama

doi:10.1016/S0038-1098(00)00390-2

Stable site and stable charge state of a fluorine atom in Si

A. Taguchi, Yoshiro Hirayama

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigated a stable state of a fluorine (F) atom in Si bulk by using first-principles calculations. We considered various interstitial sites and three charge states from +1 to -1. We found that over a wide range of Fermi levels, the bond center site in the +1 charge state is the most stable for an F atom. The present calculations suggest that the experimentally observed conductivity-dependent etching properties of F for Si are intimately related to the charge-state-dependent stable site of F in the Si bulk.

Original language	English
Pages (from-to)	595-597
Number of pages	3
Journal	Solid State Communications
Volume	116
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(00)00390-2
Publication status	Published - 2000 Oct 14
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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AU - Hirayama, Yoshiro

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AB - We investigated a stable state of a fluorine (F) atom in Si bulk by using first-principles calculations. We considered various interstitial sites and three charge states from +1 to -1. We found that over a wide range of Fermi levels, the bond center site in the +1 charge state is the most stable for an F atom. The present calculations suggest that the experimentally observed conductivity-dependent etching properties of F for Si are intimately related to the charge-state-dependent stable site of F in the Si bulk.

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