Stable bottom-contact organic thin-film transistor array with fluoropolymer dielectric for flexible displays

Y. Fujisaki, D. Kumaki, Y. Nakajima, T. Yamamoto, H. Fujikake, S. Tokito

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 104s was applied, a small shift of VTH below 1V was obtained.

Original languageEnglish
Pages721-724
Number of pages4
Publication statusPublished - 2009
Externally publishedYes
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11

Other

Other16th International Display Workshops, IDW '09
CountryJapan
CityMiyazaki
Period09/12/909/12/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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