Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies

Nobuhiko Mitoma; Shinya Aikawa; Xu Gao; Takio Kizu; Maki Shimizu; Meng Fang Lin; Toshihide Nabatame; Kazuhito Tsukagoshi

doi:10.1063/1.4868303

Stable amorphous In₂O₃-based thin-film transistors by incorporating SiO₂ to suppress oxygen vacancies

Nobuhiko Mitoma, Shinya Aikawa, Xu Gao, Takio Kizu, Maki Shimizu, Meng Fang Lin, Toshihide Nabatame, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

Incorporating SiO₂ into amorphous In₂O ₃-based thin films is found to suppress the formation of unstable oxygen vacancies. The SiO₂ incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 C. Increasing the SiO₂ content of the sputtering target decreased the sensitivity of the subthreshold swing and turn-on voltage of the device to the sputtering conditions used to deposit the amorphous oxide, making them more stable against electrical and thermal stresses. The increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations.

Original language	English
Article number	102103
Journal	Applied Physics Letters
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.4868303
Publication status	Published - 2014 Mar 10
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Incorporating SiO2 into amorphous In2O 3-based thin films is found to suppress the formation of unstable oxygen vacancies. The SiO2 incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 C. Increasing the SiO2 content of the sputtering target decreased the sensitivity of the subthreshold swing and turn-on voltage of the device to the sputtering conditions used to deposit the amorphous oxide, making them more stable against electrical and thermal stresses. The increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations.",

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AU - Mitoma, Nobuhiko

AU - Aikawa, Shinya

AU - Gao, Xu

AU - Kizu, Takio

AU - Shimizu, Maki

AU - Lin, Meng Fang

AU - Nabatame, Toshihide

AU - Tsukagoshi, Kazuhito

PY - 2014/3/10

Y1 - 2014/3/10

N2 - Incorporating SiO2 into amorphous In2O 3-based thin films is found to suppress the formation of unstable oxygen vacancies. The SiO2 incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 C. Increasing the SiO2 content of the sputtering target decreased the sensitivity of the subthreshold swing and turn-on voltage of the device to the sputtering conditions used to deposit the amorphous oxide, making them more stable against electrical and thermal stresses. The increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations.

AB - Incorporating SiO2 into amorphous In2O 3-based thin films is found to suppress the formation of unstable oxygen vacancies. The SiO2 incorporated thin film transistors exhibited reliable device characteristics after being annealed at 250 C. Increasing the SiO2 content of the sputtering target decreased the sensitivity of the subthreshold swing and turn-on voltage of the device to the sputtering conditions used to deposit the amorphous oxide, making them more stable against electrical and thermal stresses. The increased activation energy of the charge carriers in the current off region indicated a smaller density of states at the conduction-band tail, supporting stable transistor operations.

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Stable amorphous In₂O₃-based thin-film transistors by incorporating SiO₂ to suppress oxygen vacancies

Abstract

ASJC Scopus subject areas

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