Stability of the fullerenes thin film deposited on the Si(100) surface

H. Rafil-Tabar, Y. Kawazoe, H. Kamiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsPaul H. Townsend, Timothy P. Weihs, John E.Jr. Sanchez, Peter Borgesen
PublisherPubl by Materials Research Society
Pages467-471
Number of pages5
Volume308
Publication statusPublished - 1993
EventProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: 1993 Apr 121993 Apr 16

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93/4/1293/4/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Stability of the fullerenes thin film deposited on the Si(100) surface'. Together they form a unique fingerprint.

Cite this