Stability of the fullerenes thin film deposited on the Si(100) surface

H. Rafil-Tabar; Y. Kawazoe; H. Kamiyama

Stability of the fullerenes thin film deposited on the Si(100) surface

H. Rafil-Tabar, Y. Kawazoe, H. Kamiyama

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C₆₀ monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C₆₀ film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	Paul H. Townsend, Timothy P. Weihs, John E.Jr. Sanchez, Peter Borgesen
Publisher	Publ by Materials Research Society
Pages	467-471
Number of pages	5
Volume	308
Publication status	Published - 1993
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: 1993 Apr 12 → 1993 Apr 16

Other

Other	Proceedings of the 1993 Spring Meeting of the Materials Research Society
City	San Francisco, CA, USA
Period	93/4/12 → 93/4/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Stability of the fullerenes thin film deposited on the Si(100) surface. / Rafil-Tabar, H.; Kawazoe, Y.; Kamiyama, H.

Materials Research Society Symposium - Proceedings. ed. / Paul H. Townsend; Timothy P. Weihs; John E.Jr. Sanchez; Peter Borgesen. Vol. 308 Publ by Materials Research Society, 1993. p. 467-471.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rafil-Tabar, H, Kawazoe, Y & Kamiyama, H 1993, Stability of the fullerenes thin film deposited on the Si(100) surface. in PH Townsend, TP Weihs, JEJ Sanchez & P Borgesen (eds), Materials Research Society Symposium - Proceedings. vol. 308, Publ by Materials Research Society, pp. 467-471, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 93/4/12.

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abstract = "We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.",

author = "H. Rafil-Tabar and Y. Kawazoe and H. Kamiyama",

year = "1993",

language = "English",

volume = "308",

pages = "467--471",

editor = "Townsend, {Paul H.} and Weihs, {Timothy P.} and Sanchez, {John E.Jr.} and Peter Borgesen",

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publisher = "Publ by Materials Research Society",

note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 12-04-1993 Through 16-04-1993",

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AU - Kawazoe, Y.

AU - Kamiyama, H.

PY - 1993

Y1 - 1993

N2 - We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

AB - We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

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M3 - Conference contribution

AN - SCOPUS:0027845821

VL - 308

SP - 467

EP - 471

BT - Materials Research Society Symposium - Proceedings

A2 - Townsend, Paul H.

A2 - Weihs, Timothy P.

A2 - Sanchez, John E.Jr.

A2 - Borgesen, Peter

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Spring Meeting of the Materials Research Society

Y2 - 12 April 1993 through 16 April 1993

ER -

Stability of the fullerenes thin film deposited on the Si(100) surface

Abstract

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ASJC Scopus subject areas

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