Stability of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition

Masao Sakuraba, Junichi Murota, Shoichi Ono

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Stability against air exposure of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition was investigated. A 2×1-reconstructed dimer structure was clearly observed on the epitaxial Si film on Si(100) by reflection high-energy electron diffraction even after air exposure for 180 min. The dissociation process of the dimer structure and the oxidation process in the air depended on the cooling atmosphere in the reactor after chemical-vapor deposition as well as on the humidity of the air. It is proposed that the dissociation of the dimer structure in the air is suppressed by hydrogen adsorption and coincides with the oxidation of H-terminated or dangling bonds due to H2O adsorption.

Original languageEnglish
Pages (from-to)3701-3703
Number of pages3
JournalJournal of Applied Physics
Volume75
Issue number7
DOIs
Publication statusPublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Stability of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition'. Together they form a unique fingerprint.

Cite this