Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) composition-spread film growth on a temperature-gradient substrate by pulsed laser deposition

T. Wakisaka, T. Koida, Y. Matsumoto, K. Itaka, H. Koinuma

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

K 2 NiF 4 -type Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) composition-spread films were fabricated on (LaAlO 3 ) 0.3 -(Sr 2 AlTaO 6 ) 0.7 (LSAT) substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr 2 RhO 4 (x = 0) is found to grow epitaxially only in a narrow temperature range, i.e. 735 ± 15 °C. By varying the composition and temperature along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) films were fabricated to map the growth temperature dependence of film crystallinity for the full range of x = 0-1. The optimum epitaxial growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric conductivity of the films, metal-insulator-metal transitions were detected as the compositional parameter x increased from 0 to 1.

Original languageEnglish
Pages (from-to)264-267
Number of pages4
JournalApplied Surface Science
Volume223
Issue number1-3
DOIs
Publication statusPublished - 2004 Feb 15
Externally publishedYes

Keywords

  • Composition-spread film
  • Pulsed laser deposition
  • Temperature-gradient substrate

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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