Abstract
Initial adsorption of oxygen molecules on the Si(1 1 0)-16 × 2 surface and subsequent modification of the bonding states induced by mild (300 °C) annealing have been studied by synchrotron-radiation photoemission spectroscopy and scanning-tunneling microscopy. It has been shown that upon annealing, the intensity and the energy positions of the Si 2p suboxide components shift towards the values characteristic for the thermal oxide. This indicates the presence of a metastable chemisorption state of oxygen on the Si(1 1 0)-16 × 2 surface.
Original language | English |
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Pages (from-to) | 6232-6234 |
Number of pages | 3 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 19 |
DOIs | |
Publication status | Published - 2008 Jul 30 |
Keywords
- Adsorbate structure
- Dry oxidation
- Si(1 1 0) surface
- Thermal stability
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films