Sputtering yield of vapor-deposited TiC films by low energy deuterium ions

Tatsuo Shikama; J. Bohdansky

doi:10.1016/0022-3115(88)90344-3

Sputtering yield of vapor-deposited TiC films by low energy deuterium ions

Tatsuo Shikama, J. Bohdansky

Institute for Materials Research (IMR)

Research output: Contribution to journal › Letter › peer-review

1 Citation (Scopus)

Original language	English
Pages (from-to)	328-330
Number of pages	3
Journal	Journal of Nuclear Materials
Volume	152
Issue number	2-3
DOIs	https://doi.org/10.1016/0022-3115(88)90344-3
Publication status	Published - 1988 May

ASJC Scopus subject areas

Nuclear and High Energy Physics
Materials Science(all)
Nuclear Energy and Engineering

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@article{2867af083a2a430290ff5756da5a76ec,

title = "Sputtering yield of vapor-deposited TiC films by low energy deuterium ions",

author = "Tatsuo Shikama and J. Bohdansky",

year = "1988",

month = may,

doi = "10.1016/0022-3115(88)90344-3",

language = "English",

volume = "152",

pages = "328--330",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

publisher = "Elsevier",

number = "2-3",

}

TY - JOUR

T1 - Sputtering yield of vapor-deposited TiC films by low energy deuterium ions

AU - Shikama, Tatsuo

AU - Bohdansky, J.

PY - 1988/5

Y1 - 1988/5

UR - http://www.scopus.com/inward/record.url?scp=0024016874&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024016874&partnerID=8YFLogxK

U2 - 10.1016/0022-3115(88)90344-3

DO - 10.1016/0022-3115(88)90344-3

M3 - Letter

AN - SCOPUS:0024016874

VL - 152

SP - 328

EP - 330

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

SN - 0022-3115

IS - 2-3

ER -

Sputtering yield of vapor-deposited TiC films by low energy deuterium ions

ASJC Scopus subject areas

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