Sputtering yield of Ti1-xBx films by 2 keV deuterium bombardment

T. Shikama, Y. Sakai, M. Okada

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We deposited titanium borides (Ti1-xBx; 0.40 < x < 0.77) by the co-sputter coating method and measured their sputtering yield by 2 keV deuterium ion bombardment as a function of their chemical composition at room temperature. The total sputtering yield is found to increase with increase of the boron content in Ti1-xBx. The total sputtering yield of stoichiometric TiB2 is estimated to be 2.8 × 10-2, about the same as those reported previously. Concerning the partial sputtering yield, that of the titanium does not depend on the chemical composition, but that of the boron increases with increase of the boron content. These experimental results could be explained by assuming that the partial sputtering yield is proportional to the spatial concentration of each atom in the Ti1-xBx matrix.

Original languageEnglish
Pages (from-to)302-305
Number of pages4
JournalJournal of Nuclear Materials
Volume150
Issue number3
DOIs
Publication statusPublished - 1987 Nov

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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