TY - GEN
T1 - Sputtering technique to fabricate smooth surface oxide film for room temperature bonding
AU - Saito, T.
AU - Hanasaki, T.
AU - Moriwaki, T.
AU - Goto, T.
AU - Takeda, A.
AU - Miura, A.
AU - Uomoto, M.
AU - Shimatsu, T.
N1 - Publisher Copyright:
© 2021 IEEE
PY - 2021/10/5
Y1 - 2021/10/5
N2 - 200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.
AB - 200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85120400449&partnerID=8YFLogxK
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U2 - 10.1109/LTB-3D53950.2021.9598432
DO - 10.1109/LTB-3D53950.2021.9598432
M3 - Conference contribution
AN - SCOPUS:85120400449
T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
SP - 45
BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Y2 - 5 October 2021 through 11 October 2021
ER -