Sputtering technique to fabricate smooth surface oxide film for room temperature bonding

T. Saito, T. Hanasaki, T. Moriwaki, T. Goto, A. Takeda, A. Miura, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.

Original languageEnglish
Title of host publication2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45
Number of pages1
ISBN (Electronic)9781665405676
DOIs
Publication statusPublished - 2021 Oct 5
Event7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan
Duration: 2021 Oct 52021 Oct 11

Publication series

Name2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/TerritoryJapan
CityVirtual, Online
Period21/10/521/10/11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint

Dive into the research topics of 'Sputtering technique to fabricate smooth surface oxide film for room temperature bonding'. Together they form a unique fingerprint.

Cite this