Sputtering technique to fabricate smooth surface oxide film for room temperature bonding

T. Saito; T. Hanasaki; T. Moriwaki; T. Goto; A. Takeda; A. Miura; M. Uomoto; T. Shimatsu

doi:10.1109/LTB-3D53950.2021.9598432

Sputtering technique to fabricate smooth surface oxide film for room temperature bonding

T. Saito, T. Hanasaki, T. Moriwaki, T. Goto, A. Takeda, A. Miura, M. Uomoto, T. Shimatsu

Advanced Interdisciplinary Research Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness S_a of SiO₂ deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.

Original language	English
Title of host publication	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	45
Number of pages	1
ISBN (Electronic)	9781665405676
DOIs	https://doi.org/10.1109/LTB-3D53950.2021.9598432
Publication status	Published - 2021 Oct 5
Event	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 - Virtual, Online, Japan Duration: 2021 Oct 5 → 2021 Oct 11

Publication series

Name	2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Conference

Conference	7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Country/Territory	Japan
City	Virtual, Online
Period	21/10/5 → 21/10/11

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/LTB-3D53950.2021.9598432

Cite this

Saito, T., Hanasaki, T., Moriwaki, T., Goto, T., Takeda, A., Miura, A., Uomoto, M., & Shimatsu, T. (2021). Sputtering technique to fabricate smooth surface oxide film for room temperature bonding. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 (pp. 45). (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LTB-3D53950.2021.9598432

Sputtering technique to fabricate smooth surface oxide film for room temperature bonding. / Saito, T.; Hanasaki, T.; Moriwaki, T. et al.

2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 45 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saito, T, Hanasaki, T, Moriwaki, T, Goto, T, Takeda, A, Miura, A, Uomoto, M & Shimatsu, T 2021, Sputtering technique to fabricate smooth surface oxide film for room temperature bonding. in 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Institute of Electrical and Electronics Engineers Inc., pp. 45, 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021, Virtual, Online, Japan, 21/10/5. https://doi.org/10.1109/LTB-3D53950.2021.9598432

Saito T, Hanasaki T, Moriwaki T, Goto T, Takeda A, Miura A et al. Sputtering technique to fabricate smooth surface oxide film for room temperature bonding. In 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 45. (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021). doi: 10.1109/LTB-3D53950.2021.9598432

Saito, T. ; Hanasaki, T. ; Moriwaki, T. et al. / Sputtering technique to fabricate smooth surface oxide film for room temperature bonding. 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 45 (2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021).

@inproceedings{2613de72b68541b3a2e6cbaaff25c8c1,

title = "Sputtering technique to fabricate smooth surface oxide film for room temperature bonding",

abstract = "200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.",

author = "T. Saito and T. Hanasaki and T. Moriwaki and T. Goto and A. Takeda and A. Miura and M. Uomoto and T. Shimatsu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021 ; Conference date: 05-10-2021 Through 11-10-2021",

year = "2021",

month = oct,

day = "5",

doi = "10.1109/LTB-3D53950.2021.9598432",

language = "English",

series = "2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "45",

booktitle = "2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021",

}

TY - GEN

T1 - Sputtering technique to fabricate smooth surface oxide film for room temperature bonding

AU - Saito, T.

AU - Hanasaki, T.

AU - Moriwaki, T.

AU - Goto, T.

AU - Takeda, A.

AU - Miura, A.

AU - Uomoto, M.

AU - Shimatsu, T.

PY - 2021/10/5

Y1 - 2021/10/5

N2 - 200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.

AB - 200-nm-thick SiCh films were deposited on Si wafers using a bias sputtering apparatus with dual cathodes controlled by a plasma-balanced-system (PLABAS). Surface roughness Sa of SiO2 deposited films was extremely small: 0.10 nm. Bonding using the smooth surface was demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=85120400449&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85120400449&partnerID=8YFLogxK

U2 - 10.1109/LTB-3D53950.2021.9598432

DO - 10.1109/LTB-3D53950.2021.9598432

M3 - Conference contribution

AN - SCOPUS:85120400449

T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

SP - 45

BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021

Y2 - 5 October 2021 through 11 October 2021

ER -

Sputtering technique to fabricate smooth surface oxide film for room temperature bonding

Abstract

Publication series

Conference

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this