Sputter film deposition to fabricate thick oxide films with extremely smooth surface suitable for room-temperature bonding

T. Saito, H. Makita, T. Moriwaki, Y. Suzuki, N. Kato, S. Wakayanagi, A. Miura, M. Uomoto, T. Shimatsu

Research output: Contribution to journalArticle

Abstract

Energy-treatment sputtering (ETS), sputter film deposition performed during film growth with slight etching of the advancing surface with an ion-beam, can be applied to deposit SiO2 films on glass wafers. The surface roughness S a of 700 nm thick ETS-SiO2 film is 0.17 nm, which is remarkably lower than that of films deposited using conventional magnetron sputtering (S a = 0.78 nm). Moreover, the S a of 700 nm thick ETS-SiO2 film deposited on thick Al film having a rough surface of S a = 2.95 nm is only 0.24 nm. Bonding performance using ETS-SiO2 films is identical to that using SiO2 films with smooth surfaces obtained after chemical mechanical polishing.

Original languageEnglish
Article numberSBBC02
JournalJapanese journal of applied physics
Volume59
Issue numberSB
DOIs
Publication statusPublished - 2020 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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