Energy-treatment sputtering (ETS), sputter film deposition performed during film growth with slight etching of the advancing surface with an ion-beam, can be applied to deposit SiO2 films on glass wafers. The surface roughness S a of 700 nm thick ETS-SiO2 film is 0.17 nm, which is remarkably lower than that of films deposited using conventional magnetron sputtering (S a = 0.78 nm). Moreover, the S a of 700 nm thick ETS-SiO2 film deposited on thick Al film having a rough surface of S a = 2.95 nm is only 0.24 nm. Bonding performance using ETS-SiO2 films is identical to that using SiO2 films with smooth surfaces obtained after chemical mechanical polishing.
ASJC Scopus subject areas
- Physics and Astronomy(all)