Ta-doped SnO2 (Sn0.99Ta0.01O2; TTO) films were successfully sputter deposited with a high mobility of 49 cm2 V-1 s-1 on glass coated with anatase-TiO2 seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 × 10-4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO2-based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14Ω/ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO2 seed layer method are suitable for use in transparent electrodes in solar cells.
|Number of pages||2|
|Journal||Japanese journal of applied physics|
|Publication status||Published - 2010 Oct|
ASJC Scopus subject areas
- Physics and Astronomy(all)