Sputter deposition of high-mobility Sn1-xTaxO 2 films on anatase-TiO2-coated glass

Naoomi Yamada, Shoichiro Nakao, Taro Hitosugi, Tetsuya Hasegawa

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    Ta-doped SnO2 (Sn0.99Ta0.01O2; TTO) films were successfully sputter deposited with a high mobility of 49 cm2 V-1 s-1 on glass coated with anatase-TiO2 seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 × 10-4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO2-based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14Ω/ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO2 seed layer method are suitable for use in transparent electrodes in solar cells.

    Original languageEnglish
    Pages (from-to)1080021-1080022
    Number of pages2
    JournalJapanese journal of applied physics
    Volume49
    Issue number10
    DOIs
    Publication statusPublished - 2010 Oct 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Fingerprint Dive into the research topics of 'Sputter deposition of high-mobility Sn<sub>1-x</sub>Ta<sub>x</sub>O <sub>2</sub> films on anatase-TiO<sub>2</sub>-coated glass'. Together they form a unique fingerprint.

  • Cite this