Sputter deposition of high-mobility Sn1-xTaxO 2 films on anatase-TiO2-coated glass

Naoomi Yamada; Shoichiro Nakao; Taro Hitosugi; Tetsuya Hasegawa

doi:10.1143/JJAP.49.108002

Sputter deposition of high-mobility Sn_1-xTa_xO ₂ films on anatase-TiO₂-coated glass

Naoomi Yamada, Shoichiro Nakao, Taro Hitosugi, Tetsuya Hasegawa

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Ta-doped SnO₂ (Sn_0.99Ta_0.01O₂; TTO) films were successfully sputter deposited with a high mobility of 49 cm² V^-1 s^-1 on glass coated with anatase-TiO₂ seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 × 10^-4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO₂-based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14Ω/ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO₂ seed layer method are suitable for use in transparent electrodes in solar cells.

Original language	English
Pages (from-to)	1080021-1080022
Number of pages	2
Journal	Japanese journal of applied physics
Volume	49
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.49.108002
Publication status	Published - 2010 Oct

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Sputter deposition of high-mobility Sn1-xTaxO 2 films on anatase-TiO2-coated glass",

abstract = "Ta-doped SnO2 (Sn0.99Ta0.01O2; TTO) films were successfully sputter deposited with a high mobility of 49 cm2 V-1 s-1 on glass coated with anatase-TiO2 seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 × 10-4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO2-based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14Ω/ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO2 seed layer method are suitable for use in transparent electrodes in solar cells.",

author = "Naoomi Yamada and Shoichiro Nakao and Taro Hitosugi and Tetsuya Hasegawa",

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T1 - Sputter deposition of high-mobility Sn1-xTaxO 2 films on anatase-TiO2-coated glass

AU - Yamada, Naoomi

AU - Nakao, Shoichiro

AU - Hitosugi, Taro

AU - Hasegawa, Tetsuya

PY - 2010/10

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N2 - Ta-doped SnO2 (Sn0.99Ta0.01O2; TTO) films were successfully sputter deposited with a high mobility of 49 cm2 V-1 s-1 on glass coated with anatase-TiO2 seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 × 10-4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO2-based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14Ω/ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO2 seed layer method are suitable for use in transparent electrodes in solar cells.

AB - Ta-doped SnO2 (Sn0.99Ta0.01O2; TTO) films were successfully sputter deposited with a high mobility of 49 cm2 V-1 s-1 on glass coated with anatase-TiO2 seed layers. The high mobility enabled the achievement of a film resistivity of 5.9 × 10-4 Ω cm. This value of resistivity is one of the lowest ever reported for SnO2-based polycrystalline films without enhanced free-carrier absorption. An optimized film with a sheet resistance of 14Ω/ exhibited a transmittance of more than 70%, even in the near-infrared region. These results demonstrate that sputtered TTO films obtained by the TiO2 seed layer method are suitable for use in transparent electrodes in solar cells.

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Sputter deposition of high-mobility Sn_1-xTa_xO ₂ films on anatase-TiO₂-coated glass

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