TY - JOUR
T1 - Sputter deposition of anatase titanum dioxide transparent conducting films
AU - Yamada, Naoomi
AU - Hitosugi, Taro
AU - Hasegawa, Tetsuya
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - We report recent progress on sputter-deposition of Ti0.94Nb 0.06O2 polycrystalline (poly-TNO) thin films as ITO-alternative transparent conductor. In order to achieve low resistivity (ρ) in TNO, it is necessary to introduce oxygen deficiencies into anatase phase. However, growth of poly-TNO films on glass under relatively reducing atmosphere tends to stabilize the rutile phase with higher resistivity. We overcame this difficulty by developing a bi-layer technique using a TNO seed-layer, which prevents the formation of the rutile phase even under reducing deposition conditions. As a result, we succeeded in directly fabricating poly-TNO films with ρ of ∼1 × 10-3 Ω cm and visible transmittance of 60-80%, although we still need to further improve these properties towards practical applications. By comparing carrier transport properties between poly-TNO films obtained by different synthesis routes, we discuss on material parameters that govern resistivity of poly-TNO films.
AB - We report recent progress on sputter-deposition of Ti0.94Nb 0.06O2 polycrystalline (poly-TNO) thin films as ITO-alternative transparent conductor. In order to achieve low resistivity (ρ) in TNO, it is necessary to introduce oxygen deficiencies into anatase phase. However, growth of poly-TNO films on glass under relatively reducing atmosphere tends to stabilize the rutile phase with higher resistivity. We overcame this difficulty by developing a bi-layer technique using a TNO seed-layer, which prevents the formation of the rutile phase even under reducing deposition conditions. As a result, we succeeded in directly fabricating poly-TNO films with ρ of ∼1 × 10-3 Ω cm and visible transmittance of 60-80%, although we still need to further improve these properties towards practical applications. By comparing carrier transport properties between poly-TNO films obtained by different synthesis routes, we discuss on material parameters that govern resistivity of poly-TNO films.
UR - http://www.scopus.com/inward/record.url?scp=57449117677&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57449117677&partnerID=8YFLogxK
U2 - 10.3131/jvsj2.51.602
DO - 10.3131/jvsj2.51.602
M3 - Article
AN - SCOPUS:57449117677
VL - 51
SP - 602
EP - 607
JO - Shinku/Journal of the Vacuum Society of Japan
JF - Shinku/Journal of the Vacuum Society of Japan
SN - 0559-8516
IS - 9
ER -