Spurious vibration suppression by film thickness control for FBAR

Shoichi Tanifuji, Yuji Aota, Hiroshi Oguma, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


We have successfully fabricated 5GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO2/Si substrate. However, large spurious existed between resonant frequency and antiresonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using threedimensional (3-D) simulation. Spurious vibration mode was longitudinal thickness mode by simulation results. Therefore, we completely suppressed the spurious vibration by designing film thickness.

Original languageEnglish
Article number4803402
Pages (from-to)2193-2196
Number of pages4
JournalProceedings - IEEE Ultrasonics Symposium
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China
Duration: 2008 Nov 22008 Nov 5

ASJC Scopus subject areas

  • Acoustics and Ultrasonics


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