We have successfully fabricated 5GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO2/Si substrate. However, large spurious existed between resonant frequency and antiresonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using threedimensional (3-D) simulation. Spurious vibration mode was longitudinal thickness mode by simulation results. Therefore, we completely suppressed the spurious vibration by designing film thickness.
|Number of pages||4|
|Journal||Proceedings - IEEE Ultrasonics Symposium|
|Publication status||Published - 2008 Dec 1|
|Event||2008 IEEE International Ultrasonics Symposium, IUS 2008 - Beijing, China|
Duration: 2008 Nov 2 → 2008 Nov 5
ASJC Scopus subject areas
- Acoustics and Ultrasonics