TY - JOUR
T1 - Spurious vibration suppression by film thickness control for FBAR
AU - Tanifuji, Shoichi
AU - Aota, Yuji
AU - Oguma, Hiroshi
AU - Kameda, Suguru
AU - Takagi, Tadashi
AU - Tsubouchi, Kazuo
PY - 2008/12/1
Y1 - 2008/12/1
N2 - We have successfully fabricated 5GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO2/Si substrate. However, large spurious existed between resonant frequency and antiresonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using threedimensional (3-D) simulation. Spurious vibration mode was longitudinal thickness mode by simulation results. Therefore, we completely suppressed the spurious vibration by designing film thickness.
AB - We have successfully fabricated 5GHz band FBAR using aluminium nitride (AlN) film by metal organic chemical vapor deposition (MOCVD) method on SiO2/Si substrate. However, large spurious existed between resonant frequency and antiresonant frequency on admittance characteristics of prototype FBAR. We analyzed spurious vibration mechanism using threedimensional (3-D) simulation. Spurious vibration mode was longitudinal thickness mode by simulation results. Therefore, we completely suppressed the spurious vibration by designing film thickness.
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U2 - 10.1109/ULTSYM.2008.0543
DO - 10.1109/ULTSYM.2008.0543
M3 - Conference article
AN - SCOPUS:67649383871
SP - 2193
EP - 2196
JO - Proceedings - IEEE Ultrasonics Symposium
JF - Proceedings - IEEE Ultrasonics Symposium
SN - 1051-0117
M1 - 4803402
T2 - 2008 IEEE International Ultrasonics Symposium, IUS 2008
Y2 - 2 November 2008 through 5 November 2008
ER -