Sp3 -bonded new phases of BN; their growth by laser-plasma synchronous processing and applications

Shojiro Komastu, Kazuaki Kobayashi, Takahiro Nagata, Toyohiro Chikyo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

New sp3-bonded polytypic forms of BN, namely, 6H-BN and 30H-BN were prepared by plasma-assisted chemical vapor deposition (CVD) with an excimer laser at 193 nm being irradiated on the growing film surface. Only the 6H-BN was formed by post-deposition laser irradiation (PDL) of sp2-bonded BN precursor films prepared by plain plasma assisted CVD. The PDL demonstrated direct photo-induced phase transformation from sp2-bonded BN into denser sp3-bonded BN here. The growth mechanism was discussed with regard to the "bond-strength initiative rule", according to which the local thermodynamics at very early stage of growth should favor the formation of the strongest bond available (e.g. sp2-hybridized bonds in BN). P-type sp3-bonded BN / n-type Si heterodiode solar cell was fabricated by thismethod and proved to work efficiently.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages993-994
Number of pages2
DOIs
Publication statusPublished - 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: 2010 Nov 212010 Nov 24

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
Country/TerritoryJapan
CityFukuoka
Period10/11/2110/11/24

Keywords

  • BN
  • CVD
  • Film
  • Laser plasma
  • Polytype
  • Solar cel

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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