SPRAM (Spin-transfer torque RAM) technology for Green IT world

T. Kawahara, H. Takahashi, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

In Green IT world, we could enjoy our daily life with immersed digital equipments that have perfect normally OFF and instant ON functions resulting from environment-conscious technologies. For achieving this, firstly we need a non-volatile RAM technology, namely endowed with non-volatility, infinite number of write cycles, and fast operation at the same time. SPRAM is the most promising solution for this demand.

Original languageEnglish
Title of host publication2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
Duration: 2008 Dec 82008 Dec 10

Publication series

Name2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08/12/808/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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