Spontaneous formation of ultra-short period lateral composition modulation in lInGaAsN/TlInP structures

M. Ishimaru, Y. Tanaka, S. Hasegawa, H. Asahi, K. Sato, T. J. Konno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We prepared TlInGaAsN/TlInP triple quantum well structures using gas source molecular beam epitaxy and characterized their structures by means of transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Cross-sectional TEM and STEM observations and electron diffraction experiments revealed that naturally-formed vertical quantum wells, so-called lateral composition modulation, are formed in TlInGaAsN layers. Their modulation period was estimated to ~1 nm which is much smaller than that reported previously.

Original languageEnglish
Title of host publicationIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages253-254
Number of pages2
DOIs
Publication statusPublished - 2009
EventIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States
Duration: 2009 May 102009 May 14

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
CountryUnited States
CityNewport Beach, CA
Period09/5/1009/5/14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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