Spontaneous formation and photoluminescence of ZnSe dot arrays

B. P. Zhang, W. X. Wang, T. Yasuda, Y. Segawa, Keiichi Edamatsu, T. Itoh

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Highly luminescent ZnSe quantum dot arrays (QDAs) are spontaneously formed on cleavage-induced GaAs (110) surfaces. The QDAs are configured for their preferred growth on the step top. The confinement on carriers results from the difference in the band gaps of the strained ZnSe layer and the strain-relaxed ZnSe QDA. In contrast to other emissions from the ZnSe layer, the linewidth of the QDA emission is dependent neither on temperature nor on excitation intensity. Moreover, the energy position of the QDA emission is stable even at high excitations. These results reflect the δ functionlike density of states of the QDAs. This letter suggests a novel approach to semiconductor QDs and QDAs.

Original languageEnglish
Pages (from-to)3370-3372
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number23
DOIs
Publication statusPublished - 1997 Dec 8

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Spontaneous formation and photoluminescence of ZnSe dot arrays'. Together they form a unique fingerprint.

  • Cite this

    Zhang, B. P., Wang, W. X., Yasuda, T., Segawa, Y., Edamatsu, K., & Itoh, T. (1997). Spontaneous formation and photoluminescence of ZnSe dot arrays. Applied Physics Letters, 71(23), 3370-3372. https://doi.org/10.1063/1.120340