Spontaneous fluctuation between symmetric and buckled dimer domains of Si(100) at 80 K

Kenji Hata, Tomohiko Kimura, Yasuyuki Sainoo, Koji Miyake, Ryuji Morita, Mikio Yamashita, Hidemi Shigekawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

At 80 K, not all the dimers of Si(100) appear buckled in the scanning tunneling microscopy (STM) images but a certain number of the dimers arc observed in a symmetric configuration. We report on observations of a two-dimensional spontaneous fluctuation of the symmetric⇔buckled dimer domains at some particular locations. We interpret the spontaneous fluctuation to be induced by the competition of several antiphased c(4 × 2) buckled domains to expand. The fluctuation of domains was interpreted by two mechanisms: a fast switching between buckled dimer domains; and symmetric dimers induced by migration of P defects.

Original languageEnglish
Pages (from-to)2904-2909
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number5 A
DOIs
Publication statusPublished - 1999
Externally publishedYes

Keywords

  • C defect
  • Dimers
  • Fluctuation
  • P defect
  • STM
  • Si(100)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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