Split-gate organic field-effect transistors for high-speed operation

T. Uemura; T. Matsumoto; K. Miyake; M. Uno; S. Ohnishi; T. Kato; M. Katayama; S. Shinamura; M. Hamada; M. J. Kang; K. Takimiya; C. Mitsui; T. Okamoto; J. Takeya

doi:10.1002/adma.201304976

Split-gate organic field-effect transistors for high-speed operation

T. Uemura, T. Matsumoto, K. Miyake, M. Uno, S. Ohnishi, T. Kato, M. Katayama, S. Shinamura, M. Hamada, M. J. Kang, K. Takimiya, C. Mitsui, T. Okamoto, J. Takeya

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.

Original language	English
Pages (from-to)	2983-2988
Number of pages	6
Journal	Advanced Materials
Volume	26
Issue number	19
DOIs	https://doi.org/10.1002/adma.201304976
Publication status	Published - 2014 May 21
Externally published	Yes

Keywords

contact resistance
organic electronics
organic field-effect transistors

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201304976

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title = "Split-gate organic field-effect transistors for high-speed operation",

abstract = "Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.",

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T1 - Split-gate organic field-effect transistors for high-speed operation

AU - Uemura, T.

AU - Matsumoto, T.

AU - Miyake, K.

AU - Uno, M.

AU - Ohnishi, S.

AU - Kato, T.

AU - Katayama, M.

AU - Shinamura, S.

AU - Hamada, M.

AU - Kang, M. J.

AU - Takimiya, K.

AU - Mitsui, C.

AU - Okamoto, T.

AU - Takeya, J.

PY - 2014/5/21

Y1 - 2014/5/21

N2 - Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.

AB - Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.

KW - contact resistance

KW - organic electronics

KW - organic field-effect transistors

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DO - 10.1002/adma.201304976

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JF - Advanced Materials

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ER -

Split-gate organic field-effect transistors for high-speed operation

Abstract

Keywords

ASJC Scopus subject areas

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