Split-gate organic field-effect transistors for high-speed operation

T. Uemura, T. Matsumoto, K. Miyake, M. Uno, S. Ohnishi, T. Kato, M. Katayama, S. Shinamura, M. Hamada, M. J. Kang, K. Takimiya, C. Mitsui, T. Okamoto, J. Takeya

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.

Original languageEnglish
Pages (from-to)2983-2988
Number of pages6
JournalAdvanced Materials
Volume26
Issue number19
DOIs
Publication statusPublished - 2014 May 21
Externally publishedYes

Keywords

  • contact resistance
  • organic electronics
  • organic field-effect transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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