Abstract
Electron g-factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostrucrure is studied by measuring angle dependence of magnetotranport properties. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.
Original language | English |
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Title of host publication | Realizing Controllable Quantum States: Mesoscopic Superconductivity and Spintronics - In the Light of Quantum Computation |
Publisher | World Scientific Publishing Co. |
Pages | 371-376 |
Number of pages | 6 |
ISBN (Print) | 9789812701619, 9789812564689 |
DOIs | |
Publication status | Published - 2005 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)