Spintronics in band electrons: G-factor control in an InAs-inserted InGaAs/InAlAs heterostructure

Junsaku Nitta; Yiping Lin; Tatsushi Akazaki; Takaaki Koga

doi:10.1142/9789812701619_0008

Spintronics in band electrons: G-factor control in an InAs-inserted InGaAs/InAlAs heterostructure

Junsaku Nitta, Yiping Lin, Tatsushi Akazaki, Takaaki Koga

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Electron g-factor in an InAs-inserted-channel In_0.53Ga_0.47As/In_0.52Al_0.48As heterostrucrure is studied by measuring angle dependence of magnetotranport properties. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.

Original language	English
Title of host publication	Realizing Controllable Quantum States: Mesoscopic Superconductivity and Spintronics - In the Light of Quantum Computation
Publisher	World Scientific Publishing Co.
Pages	371-376
Number of pages	6
ISBN (Print)	9789812701619, 9789812564689
DOIs	https://doi.org/10.1142/9789812701619_0008
Publication status	Published - 2005 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Spintronics in band electrons : G-factor control in an InAs-inserted InGaAs/InAlAs heterostructure. / Nitta, Junsaku; Lin, Yiping; Akazaki, Tatsushi; Koga, Takaaki.

Realizing Controllable Quantum States: Mesoscopic Superconductivity and Spintronics - In the Light of Quantum Computation. World Scientific Publishing Co., 2005. p. 371-376.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

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abstract = "Electron g-factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostrucrure is studied by measuring angle dependence of magnetotranport properties. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.",

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T2 - G-factor control in an InAs-inserted InGaAs/InAlAs heterostructure

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AU - Koga, Takaaki

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AB - Electron g-factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostrucrure is studied by measuring angle dependence of magnetotranport properties. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.

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