Electron g-factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostrucrure is studied by measuring angle dependence of magnetotranport properties. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.
|Title of host publication||Realizing Controllable Quantum States: Mesoscopic Superconductivity and Spintronics - In the Light of Quantum Computation|
|Publisher||World Scientific Publishing Co.|
|Number of pages||6|
|ISBN (Print)||9789812701619, 9789812564689|
|Publication status||Published - 2005 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)