Spintronics in band electrons: G-factor control in an InAs-inserted InGaAs/InAlAs heterostructure

Junsaku Nitta, Yiping Lin, Tatsushi Akazaki, Takaaki Koga

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Electron g-factor in an InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostrucrure is studied by measuring angle dependence of magnetotranport properties. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.

Original languageEnglish
Title of host publicationRealizing Controllable Quantum States: Mesoscopic Superconductivity and Spintronics - In the Light of Quantum Computation
PublisherWorld Scientific Publishing Co.
Pages371-376
Number of pages6
ISBN (Print)9789812701619, 9789812564689
DOIs
Publication statusPublished - 2005 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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